Speaker： Bin Li

Time: 2020/12/15  11:00 A.M

Location: Zhiyuan Building 1206 office

Abstract of the report：

The Memristors with characteristics of memory and nano-scale can be applied to accurately simulate neuromorphic synapse functions, which can bring about the breakthrough in the artificial intelligence. Dielectric film is an important component in the memristors that greatly impacts the formation of conductive path between the electrodes. The fabrication of dielectric film is generally conducted by physical deposition methods, resulting to the formation of dense dielectric film with dense pack of nanoparticles and random distribution of nanospace in it. Therefore, the conductive pathway forms randomly in the dielectric film. Furthermore, the function of corresponded dielectric film is not versatile. These disadvantages significantly restrict the application of memristors in simulating complex functions of synapse. Here, firstly, the orientation of mesopores in the dielectric silica layer can be used to modulate the STP of an artificial memristive synapse. The artificial memristive synapses with vertical mesopores exhibit the fastest current increase by successive voltage pulses. Also, oriented silica mesopores are designed for varying the relaxation time of memory, and thus the successful mediation of STP is achieved. Finally, the micropore material zeolites are demonstrated to realize the memristive behavior.

Brief introduction of speaker：

 Bin Li is currently an associate professor at Qingdao University of Science and Technology, China. He received PhD degree in chemistry from Fudan University in 2014, supervised by Prof. Dongyuan Zhao. He then worked as a postdoctoral fellow at Nanyang Technological University (Singapore), co-worked with Prof. Xiaodong Chen. His research interests include porous and nanostructured materials for electronic devices and catalysis.

Welcome to attend.